#

Test

Abr.

Refer to
MIL-STD 883JEDEC-STD-22

Conditions
Requirements

Duration

Sample Size per Lot (1)

Numberof Lots(1)

Accepton
# fails

Comment

1

High TemperatureOperating Life

Electrical Distribution

HTOL

ED

M1005

JA108

AEC-Q100-009

150°C

or 125°C

VDDmax; signal

500 h

1000 h

77

3

0

LT,RT,HT

2

High Temperature

Bake

HTB

M1008

JA103

175°C, storage

500 h

77

1

0

RT,HT

3

Preconditioning 3)

subsequent

PC

JA113

J-STD-020

acc. to MRT- level

see Annex 5

-

77

3

0

RT

-

Temperature Humidity Bias 4)

post test

Internal Inspection

THB

JA101

85°C / 85% R.H.
alternating VDDmax
at all pins

1000 h

5

3

0

RT,HT

P

4

Preconditioning 3)

subsequent

PC

JA113

J-STD-020

acc. to MRT- level

see Annex 5

-

77

3

0

RT

-

Autoclave

post test

Internal Inspection

AC

JA102

121°C / 100% RH
storage

240 h 2)

5

3

0

RT

P

5

Preconditioning 3)

subsequent

PC

JA113

J-STD-020

acc. to MRT- level

see Annex 5

-

77

3

0

RT

-

Temperature

cycling 5)

(air to air)

post test

Bond pull test

TC

BPS

M1010

JA104

AEC-Q100

-65°C / 150°C

or

-50°C / 150°C

500 cycl.

1000 cycl.

5

3

0

RT,HT

6

Latch-up Test

LU

JEDEC 17

AEC-Q100-004

-

-

6

1

0

RT,HT

G

7

ESD Test

ESD

M3015

AEC-Q100-002

Human Body Model

-

3

1

0

RT,HT

G

8

Early Life
Failure Rate 6)

ELFR

AEC-Q100-001

125°C; 48 h
150°C; 16 h

-

800

3

0

RT,HT

9

E²PROM

Data Endurance/

Retention Test 7)

ET

AECQ100-005

-

-

77

3

0

RT,HT

10

Hot carrier test

HC

JESD 28

Vds>Vdsmax

acc. to Spec

@ 27°C

-

Wafer

3

-

-

11

Gate oxide test

GOX

JESD35

gate oxide capacity

@ 27°C

-

Wafer

3

-

-

12

Electromigration

test ( fast)

SWEAT

JEP119

@ 280..380°C

4..10 MA/cm²

200...1000s

Wafer

3

-

metal lines

13

Electromigration

test

EM

-

@ 175..300°C

2... 4 MA/cm²

300...500h

Test-

structure

3

-

metal lines,

via’s, contacts